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| BU705D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Built-in Integrated Efficiency Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
2.5
A
ICM
Collector Current-Peak tp<2ms
IBB
Base Current- Continuous
4
A
2
A
IBM
Base Current-Peak tp<2ms
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
75
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.67 â/W
isc Websiteï¼www.iscsemi.cn
isc Product Specification
BU705D
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