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| BU607 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU607
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.65A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.65A
hFE
DC Current Gain
IC= 2A; VCE= 5V;
1.0 V
1.3 V
15
ICEV
Collector Cutoff Current
VCE= 330V; VBE= -1.5V
15 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
400 mA
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1MHz
10
tf
Fall Time
IC= 5A; IB1= -IB2= 0.65A, VCC= 40V
MHz
0.75 μs
isc Websiteï¼www.iscsemi.cn
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