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| BU607 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU607
DESCRIPTION
·High Voltage: VCEV= 330V(Min)
·Fast Switching Speed-
: tf= 0.75μs(Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TVâs and CRTâs
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IBB
Base Current
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
60
W
150
â
-65~150
â
isc Websiteï¼www.iscsemi.cn
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