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| BU508A-M Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 800V (Min) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU508A-M
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2.0A
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 6.0V ; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 5V;
Switching times
800
V
1.0 V
1.3 V
1 mA
10 mA
8
10
3
MHz
tf
Fall Time
IC= 4A , IB1= 0.8A; IB2= -1.6A
0.4
μs
isc websiteï¼www.iscsemi.cn
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