BU508A-M Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 800V (Min)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 800V (Min)
·High Power Dissipation-
: P_D= 100W@T_C= 25℃
APPLICATIONS
·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICM
Collector Current-Peak
16
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
6
A
100
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.0 ℃/W
isc Product Specification
BU508A-M
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}