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| BU506F Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon diffused power transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU506F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0; L= 25mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 1.33A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB=B 1.33A
VCE= VCESmax; VBE= 0
VCE= VCESmax; VBE= 0;TJ= 125â
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 5V
Switching Times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 3A , IB(end)= 1A; LB= 12μH
MIN TYP. MAX UNIT
700
V
5.0
V
1.3
V
0.5
1
mA
10 mA
2.25
6.5
μs
0.7
μs
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