BU506F Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon diffused power transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU506F
DESCRIPTION
·High Voltage
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage-V_BE=0
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current-Continuous
3
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
20
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
6.35 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc Website：www.iscsemi.cn