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| BU505DF Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU505DF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
hFE-1
DC current gain
IC=2A ;IB=0.9 A
VCE =1500V;VBE=0;
TC=125
IC=0.1A ;VCE=5V
hFE-2
DC current gain
IC=2A ;VCE=5V
VF
Diode forward voltage
IF=2A
fT
Transition frequency
IC=0.1A ;VCE=5V
CC
Collector output capacitance
IE=0;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
700
V
7.5 13.5
V
1.0
V
1.3
V
0.15
1.0
mA
6
30
2.22
1.8
V
7
MHz
65
pF
2
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