BU505DF Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU505DF
DESCRIPTION
With TO-220Fa package
High voltage,high speed
With integrated efficiency diode
APPLICATIONS
For horizontal deflection circuits of color
TV receivers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current (peak)
I_B
Base current
I_BM
Base current(peak)
P_tot
Total power dissipation
T_C=25
T_j
Max.operating junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
Thermal resistance from junction to ambient
VALUE
1500
700
5
2.5
4
2
4
20
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
55
UNIT
K/W