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| BU505D Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU505D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.9A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB=B 0.9A
VCE= VCESmax; VBE= 0
VCE= VCESmax; VBE= 0;TJ= 125â
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
fT
Current-GainâBandwidth Product IC= 0.1A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 2A
COB
Output Capacitance
Switching Times; Resistive load
IE= 0; VCB= 10V; ftest= 1.0MHz
tstg
Storage Time
tf
Fall Time
IC= 2A , IB(end)= 0.9A;Vdr= -4V
LB= 25μH
MIN TYP. MAX UNIT
700
V
1.0
V
1.3
V
0.15
1.0
mA
1.0 mA
6
30
7
MHz
1.8
V
65
pF
9.5
μs
0.85
μs
isc Websiteï¼www.iscsemi.cn
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