BU505D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU505D
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 700V(Min.)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage-V_BE=0
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
2.5
A
I_CM
Collector Current-Peak
4
A
I_BB
Base Current-Continuous
2
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
75
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.67 ℃/W
isc Website：www.iscsemi.cn