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| BU500 Datasheet, PDF (2/3 Pages) Motorola, Inc – NPN SILICON POWER METAL TRANSISTOR | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A; IB=0;L=10mH
V(BR)EBO Emitter-base breakdown voltage
IE=100mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A;IB=2A
VBE
Base-emitter on voltage
IC=4.5A;VCE=5V
ICBO
Collector cut-off current
VCE=1000V;VBE=-2V
ICEX
Collector cut-off current
VCE=1500V;VBE=-2V
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=4.5A ;IB1=-IB2=1.5A
VCC=100V ;
Product Specification
BU500
MIN TYP. MAX UNIT
700
V
5
V
1.0
V
1.3
V
0.02 mA
1.0 mA
10
mA
8
36
3.0
1.2
s
1.0
s
2
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