BU500 Datasheet, PDF (1/3 Pages) Motorola, Inc – NPN SILICON POWER METAL TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU500
DESCRIPTION
With TO-3 package
Low collector saturation voltage
APPLICATIONS
Designed for use in large screen color
deflection circuits.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
I_C
I_CM
Emitter-base voltage
Collector current
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
1500
700
5
6
16
4
75
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.66
UNIT
/W