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| BU4508DZ Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU4508DZ
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.25A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 5A; IB=B 1.25A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
VECF
C-E Diode Forward Voltage
Switching times (16kHz line deflection circuit)
tstg
Storage Time
tf
Fall Time
IF= 5A
IC= 5A, IB1= 1A; IB2= -2.5A
MIN TYP. MAX UNIT
800
V
7.5
V
3.0
V
1.03 V
1.0
2.0
mA
7
4.2
7.3
2.2
V
3.75 μs
0.4 μs
isc Websiteï¼www.iscsemi.cn
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