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| BU4508DZ Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU4508DZ
DESCRIPTION
·High Voltage-
·High Switching Speed
·Built-in Damer Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
15
A
IBB
Base Current- Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
32
W
150
â
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.0
â/W
isc Websiteï¼www.iscsemi.cn
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