BU408 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU408
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
200
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB= 1.2A
VCE= 400V; VBE= 0
VCE=250V; VBE= 0
VCE=250V; VBE= 0;TC= 150℃
VEB= 6V; IC=0
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
10
t_f
Fall Time
IC= 6A; IB1= -IB2= 1.2A
V
1.0 V
1.2 V
5.0
0.1 mA
1.0
1.0 mA
MHz
0.4 μs
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