BU408 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU408
DESCRIPTION
·High Voltage: V_CEV= 400V(Min)
·Fast Switching Speed-
: t_f= 400ns(Max)
·Low Saturation Voltage-
: V_CE(sat)= 1.0V(Max)@ I_C= 6A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEV Collector-Emitter Voltage
400
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak Repetitive
10
A
ICP
Collector Current- Peak (10ms)
15
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
4
A
60
W
150
℃
T_stg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
2.08 ℃/W
Thermal Resistance, Junction to Ambient 70 ℃/W
isc website：www.iscsemi.cn
1