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| BU406F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU406F/407F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BU406F
BU407F
IC= 200mA ; IB= 0; L= 25mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICES
Collector Cutoff Current
VCE= VCESmax; VBE= 0
BU406F
VCE= 250V; VBE= 0
VCE= 350V; VBE= 0;TJ=150â
ICES
Collector Cutoff Current
BU407F
VCE= 200V; VBE= 0
VCE= 200V; VBE= 0;TJ=150â
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 10V
toff
Turn-Off Time
IC= 5A; IB1= -IB2= 0.5A
MIN TYP. MAX UNIT
200
V
150
1.0
V
1.2
V
0.05
1
mA
0.1
1
mA
0.1
1
1
mA
4
MHz
0.75 μs
isc Websiteï¼www.iscsemi.cn
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