BU406F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU406F/407F
DESCRIPTION
·High Voltage
·Fast Switching Speed-
: t_off= 0.75μs (Max)
·Low Saturation Voltage-
: V_CE(sat)= 1.0V(Max)@ I_C= 5A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators and motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage ^BU406F
V_BE=0
BU407F
400
330
V
BU406F
200
V_CEO
Collector-Emitter Voltage
V
BU407F
150
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
18
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
7 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc Website：www.iscsemi.cn