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| BU406D Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU406D BU407D
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BU406D
BU407D
IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=0.65A
ICEV
Collector
cut-off current
BU406D VCE=400V; VBE=-1.5V
BU407D VCE=330V; VBE=-1.5V
IEBO
Emitter cut-off current
VEB=6.0V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
VF
Diode forward voltage
IF=5A
fT
Transition frequency
tf
Fall time
IC=0.5A ;VCE=10V;f=1.0MHz
IC=5A ;VCC=40V
IBend=0.65A
MIN TYP. MAX UNIT
200
V
150
1.0
V
1.3
V
15
mA
400 mA
15
1.5
V
10
MHz
0.75 μs
2
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