BU406D Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU406D BU407D
DESCRIPTION
·
·With TO-220C package
·High voltage
·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
BU406D
Open emitter
BU407D
V_CEO
Collector-emitter voltage
BU406D
Open base
BU407D
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_tot
Total power dissipation
T_C=25℃
T_j
Maximum operating junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
400
330
200
150
6
7
10
4
60
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
2.08
UNIT
℃/W