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| BU406 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU406
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
1.0 V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB=B 0.5A
VCE= 400V; VBE= 0
VCE=250V; VBE= 0
VCE=250V; VBE= 0;TC= 150â
VEB= 6V; IC=0
1.2 V
5.0
0.1 mA
1.0
1.0 mA
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 10V, ftest= 20MHz
10
MHz
COB
Output Capacitance
tf
Fall Time
IE= 0; VCB= 10V; ftest= 1.0MHz
IC= 5A; IB1= -IB2= 0.5A, L= 150μH
VCC= 40V
80
pF
0.75 μs
isc Websiteï¼www.iscsemi.cn
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