|
BU406 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W) | |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU406
DESCRIPTION
·High Voltage: VCEV= 400V(Min)
·Fast Switching Speed-
: tf= 750ns(Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TVâs and CRTâs
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
400
VCEV
Collector-Emitter Voltage
400
VCEO
Collector-Emitter Voltage
200
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
7
ICP
Collector Current-Peak Repetitive
10
ICP
Collector Current- Peak (10ms)
15
IBB
Base Current
4
Collector Power Dissipation
PC
@ TC=25â
60
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
V
A
A
A
A
W
â
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.08 â/W
70 â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |