BU326 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,375-400V,75W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU326
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH
VCE(_sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VCE(_sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A
VBE(_sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
VBE(_sat)-2 Base-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
ICES
Collector Cutoff Current
VCE=800V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V, f= 1.0MHz
Switching Times
t_on
Turn-On Time
t_stg
Storage Time
t_f
Fall Time
IC= 2.5A; IB1= 0.5A; IB2= -1A;
VCC= 250V
MIN TYP. MAX UNIT
375
V
1.5
V
3.0
V
1.4
V
1.6
V
1.0 mA
10 mA
25
4
MHz
0.5 μs
3.5 μs
0.5 μs
isc Website：www.iscsemi.cn
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