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| BU326 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,375-400V,75W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU326
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 375V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
APPLICATIONS
·Designed for use in operating in color TV receivers chopper
supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
375
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
75
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.33 â/W
isc Websiteï¼www.iscsemi.cn
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