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| BU323AP Datasheet, PDF (2/3 Pages) Motorola, Inc – DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=10mH
VCER(SUS) Collector-emitter sustaining voltage IC=3A; RBE=100Ω;L=500μH
VCEsat-1 Collector-emitter saturation voltage IC=3 A;IB=60mA
VCEsat-2 Collector-emitter saturation voltage IC=6A;IB=120m A
VCEsat-3 Collector-emitter saturation voltage IC=10A;IB=300m A
VBEsat-1 Base-emitter saturation voltage
IC=6A;IB=120m A
VBEsat-2 Base-emitter saturation voltage
IC=10A;IB=300m A
ICER
Collector cut-off current
VCE=Rated;VBE=100Ω
IEBO
Emitter cut-off current
VEB=6V; IC=0
ICBO
Collector cut-off current
VCB=Rated; IE=0
hFE-1
DC current gain
IC=3A ; VCE=6V
hFE-2
DC current gain
IC=6A ; VCE=6V
hFE-3
DC current gain
IC=10A ; VCE=6V
VBE
Base-emitter on voltage
IC=10A ; VCE=6V
VF
Diode forward voltage
IF=10A
Cob
Output capacitance
VCB=10V,IE=0;fT=100kHz
Switching times
ts
Storage time
tf
Fall time
IC=6A ;
IB1=IB2=0.3A
VCC=12V ;
Product Specification
BU323AP
MIN TYP. MAX UNIT
400
V
475
V
1.5
V
1.7
V
2.7
V
2.2
V
3
V
1
mA
40
mA
1
mA
300
550
150
350 2000
50
150
2.5
V
2
3.5
V
165 350
pF
7.5
15
μs
5.2
15
μs
2
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