BU323AP Datasheet, PDF (1/3 Pages) Motorola, Inc – DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU323AP
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·Low collector saturation voltage
APPLICATIONS
·Designed for automotive ignition,switching
regulator and motor control applications.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
V_CEO(SUS) Collector-emitter voltage
V_CEV
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open base
Open base
Open collector
T_C=25℃
VALUE
400
475
6
10
16
3
125
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W