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| BU2532AW Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2532AW
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.17A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 7A; IB= 1.17A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 7.5V; IC= 0
5.0 V
0.97 V
1.0
mA
2.0
1.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
9
27
hFE-2
DC Current Gain
Switching times
tstg
Storage Time
tf
Fall Time
IC= 7A; VCE= 5V
6
12.5
IC= 7A , IB(end)= 1A; LC= 100μH;
VCC= 138V; Cfb= 3nF
1.8 μs
0.1 μs
isc websiteï¼www.iscsemi.cn
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