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| BU2532AW Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2532AW
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
16
A
ICM
Collector Current-Peak
40
A
IB
Base Current- Continuous
10
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
15
A
125
W
150
â
Tstg
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 â/W
isc websiteï¼www.iscsemi.cn
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