BU2525AW-3PN Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2525AW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125℃
VEB= 7.5V; IC= 0
1.3
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
13
hFE-2
DC Current Gain
COB
Output Capacitance
IC= 8A; VCE= 5V
IE= 0; VCB= 10V; ftest= 1MHz
5
7
9.5
145
pF
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