BU2525AW-3PN Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of large
Screen colour television receivers up to 32 KHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM
Collector- Emitter Voltage Peak
value
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current- Continuous
8
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
12
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc Product Specification
BU2525AW
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-mb
Thermal Resistance,Junction
mounting base
to
1.0
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}