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| BU2507DX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2507DX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A ;IB= 0.8A
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125â
VEB= 7.5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 4A
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
MIN TYP. MAX UNIT
700
V
7.5 13.5
V
5.0
V
1.1
V
1.0
2.0
mA
160
mA
14
5
7
9
2.0
V
68
pF
isc Websiteï¼www.iscsemi.cn
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