BU2507DX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
7.5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-peak
15
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
6
A
45
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 2.8 K/W
isc Product Specification
BU2507DX
isc Website：www.iscsemi.cn