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| BU2507AX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2507AX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A ;IB= 0.8A
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125â
VEB= 7.5V; IC= 0
5.0
V
1.1
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 100mA; VCE= 5V
17
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
5
7
9
COB
Output Capacitance
Switching times
IE= 0; VCB= 10V; ftest= 1MHz
68
pF
tstg
Storage Time
tf
Fall Time
IC= 4A, IB(end)= 0.7A; LB=B 6μH;
-VBB= 4V
6.0 μs
0.5 μs
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