BU2507AX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2507AX
DESCRIPTION
·High Switching Speed
·High Voltage
APPLICATIONS
·Designed for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CESM Collector-Emitter Voltage V_BE=0
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
7.5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-peak
15
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
6
A
45
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 2.8 K/W
isc Website：www.iscsemi.cn