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| BU209 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU209
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CES Collector-Emitter Breakdown Voltage IC= 1mA
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 1.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 1.3A
hFE
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1MHz
fT
Current-GainâBandwidth Product
IC= 0.1A;VCE= 5V;ftest= 5MHz
Switching Times
ts
Storage Time
tf
Fall Time
IC= 3A; IB=B 1.8A;LB= 10μH
MIN TYP. MAX UNIT
1700
V
5
V
5.0
V
1.5
V
2.25
125
pF
7
MHz
10
μs
0.7 μs
isc Websiteï¼www.iscsemi.cn
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