BU209 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU209
DESCRIPTION
·High Reverse Voltage
·High Peak Power
·Collector Current- I_C = 4A
APPLICATIONS
·Designed for use in horizontal deflection circuits in color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage
1700
V
V_CEO Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
4
A
I_CM
Collector Current-Peak
7.5
A
I_BB
Base Current-Continuous
2.5
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C≤95℃
T_J
Junction Temperature
T_stg
Storage Temperature
4
A
12.5
W
115
℃
-65~115 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.6 ℃/W
isc Website：www.iscsemi.cn