 English |
|
|
|
|
|
|
|
| BU207 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,1300-1500V,55W) | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU207
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
ICES
Collector Cutoff Current
VCE= 1300V; VBE= 0
5.0
V
1.5
V
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
10
mA
hFE
DC Current Gain
IC= 4.5A; VCE= 5V
2.25
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 5V; ftest= 1MHz
tf
Fall Time
IC= 4.5A; IB= 1.8A; LB= 10μH
125
pF
4
MHz
1.0
μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese