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| BU207 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,1300-1500V,55W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU207
DESCRIPTION
·High Voltage-VCEX= 1300V(Min.)
·Collector Current- IC = 5.0A
APPLICATIONS
·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX
Collector-Emitter Voltage
1300
V
VCEO Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5.0
A
ICM
Collector Current-Peak
7.5
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
2.5
A
55
W
115
â
-65~115 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.64 â/W
isc Websiteï¼www.iscsemi.cn
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