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| BU204 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.5A,1300-1500V,36W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU204
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 1A
ICES
Collector Cutoff Current
VCE= 1300V; VBE= 0
5.0
V
1.5
V
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5.0V ; IC= 0
10
mA
hFE
DC Current Gain
IC= 2A ; VCE= 5V
2
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 5V; ftest= 1MHz
tf
Fall Time
IC= 2A; IB=B 1A; LB= 25μH
50
pF
4
MHz
0.65
μs
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