English
Language : 

BU204 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.5A,1300-1500V,36W)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU204
DESCRIPTION
·High Voltage-VCEX= 1300V(Min.)
·Collector Current- IC = 2.5A
APPLICATIONS
·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX
Collector-Emitter Voltage
1300
V
VCEO Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
3.0
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1.0
A
36
W
115
℃
-65~115 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 ℃/W
isc Website:www.iscsemi.cn