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| BU120 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU120
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 2.5A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 10V
fT
Current-GainâBandwidth Product IC= 1A; VCE= 10V;ftest= 1MHz
MIN MAX UNIT
200
V
400
V
3.3
V
2.2
V
0.1
mA
0.1
mA
30
120
6
MHz
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