BU120 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU120
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:V_CEO(SUS) = 200V(Min)
APPLICATIONS
·Designed for horizontal deflection output stage of CTV
receivers and high voltalge, fast switching and industrial
application.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
T_stg
Storage Temperature Range
400
V
200
V
7
V
10
A
15
A
3.0
A
100
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc website：www.iscsemi.cn
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