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| BFS520 Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFS520
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 6V; IE= 0
0.05 μA
hFE
DC Current Gain
IC= 20mA ; VCE= 6V
60
250
fT
Current-GainâBandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz
9
GHz
COB
Output Capacitance
IE= 0 ; VCB= 6V; f= 1MHz
0.5
pF
Cre
Feedback Capacitance
︱S21e︱2 Insertion Power Gain
IC= 0 ; VCB= 6V; f= 1MHz
0.4
pF
IC= 20mA ; VCE= 6V; f= 900MHz
13
14
dB
NF
Noise Figure
IC= 5mA ; VCE= 6V; f= 900MHz
1.1 1.6 dB
NF
Noise Figure
IC= 20mA ; VCE= 6V; f= 900MHz
1.6 2.1 dB
NF
Noise Figure
IC= 5mA ; VCE= 6V; f= 2GHz
1.9
dB
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