BFS520 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFS520
DESCRIPTION
·Low Noise Figure
NF = 1.1 dB TYP. @V_CE = 6 V, I_C = 5 mA, f = 900 MHz
·High Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @V_CE = 6 V, I_C = 20 mA, f = 1 GHz
APPLICATIONS
·Designed for wideband applications such as satellite TV
tuners,cellular phones, cordless phones,pagers etc, with
signal frequencies up to 2 GHz.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CES Collector-Emitter Voltage R_BE= 0
15
V
V_EBO Emitter-Base Voltage
2.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
70
mA
0.3
W
175
℃
-65~150
℃
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