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| BFR35AP Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR35AP
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 2.5V; IC= 0
15
V
10 μA
0.1 μA
100 μA
hFE
DC Current Gain
IC= 15mA ; VCE= 8V
40
200
fT
Current-GainâBandwidth Product
IC= 15mA ; VCE= 8V; f= 500MHz 3.5
5
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.38 0.6 pF
PG
Power Gain
IC= 15mA ; VCE= 8V; f= 900MHz
15
dB
PG
Power Gain
︱S21e︱2 Insertion Power Gain
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IC= 15mA ; VCE= 8V; f= 1.8GHz
9.5
dB
IC= 15mA ; VCE= 8V; f= 900MHz
12.5
dB
IC= 15mA ; VCE= 8V; f= 1.8GHz
7
dB
IC= 2mA ; VCE= 6V; f= 900MHz
1.8
dB
NF
Noise Figure
IC= 2mA ; VCE= 6V; f= 1.8GHz
2.9
dB
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