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| BFR35AP Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR35AP
DESCRIPTION
·Low Noise Figure
NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz
·High Gain
︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz
APPLICATIONS
·Designed for low distortion broadband amplifiers and
oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCES Collector-Emitter Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
30
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
mA
0.28
W
150
â
-65~150
â
isc websiteï¼www.iscsemi.cn
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