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| BFQ591 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFQ591
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CES Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0
15
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1m A ; IE= 0
20
V
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IE= 0.1m A ; IC= 0
VCB= 10V; IE= 0
3
V
0.1 μA
hFE
DC Current Gain
IC= 70mA ; VCE= 8V
60
250
fT
Current-GainâBandwidth Product
IC= 70mA ; VCE= 12V; f= 1GHz
7
GHz
PG
Power Gain
IC= 70mA;VCE= 12V; f= 900MHz
11
dB
PG
Power Gain
IC= 70mA;VCE= 12V; f= 2GHz
5.5
dB
Cre
Feedback Capacitance
︱S21e︱2 Insertion Power Gain
VO
Output Voltage
IE= 0 ; VCB= 12V; f= 1MHz
IC= 70mA ; VCE= 12V; f= 1GHz
note
0.8
pF
10
dB
700
mV
Note: dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo â6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured @ f(p+q+r) = 793.25 MHz.
isc Websiteï¼www.iscsemi.cn
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