BFQ591 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFQ591
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for use in MATV or CATV amplifiers and RF
communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
200
mA
2.25
W
175
℃
-65~150
℃
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