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| BFG193 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFG193
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
12
V
100 μA
0.1 μA
1
μA
hFE
DC Current Gain
IC= 30mA ; VCE= 8V
50
200
fT
Current-GainâBandwidth Product
IC= 50mA ; VCE= 8V; f= 500MHz
6
8
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.6 0.9 pF
PG
Power Gain
IC= 30mA ; VCE= 8V; f= 900MHz
15.5
dB
PG
Power Gain
︱S21e︱2 Insertion Power Gain
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IC= 30mA ; VCE= 8V; f= 1.8GHz
10
dB
IC= 30mA ; VCE= 8V; f= 900MHz
13.5
dB
IC= 30mA ; VCE= 8V; f= 1.8GHz
8
dB
IC= 10mA ; VCE= 8V; f= 900MHz
1.3
dB
NF
Noise Figure
IC= 10mA ; VCE= 8V; f= 1.8GHz
2.1
dB
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